







MOSFET P-CH 20V 3.8A SOT23
DIODE GEN PURP 75V 250MA SOD123
CONN HEADER VERT 12POS 2.54MM
CONN SOCKET 20POS 0.079 GOLD PCB
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 62mOhm @ 4.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 487 pF @ 20 V |
| 场效应管特征: | - |
| 功耗(最大值): | 800mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SIHW33N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO247AD |
|
|
ISL9N310AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXFK140N30PWickmann / Littelfuse |
MOSFET N-CH 300V 140A TO264AA |
|
|
SIHG17N60D-GE3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
|
HUF76429D3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
APTML100U60R020T1AGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 20A SP1 |
|
|
FCH099N60ERochester Electronics |
MOSFET N-CH 600V 37A TO247-3 |
|
|
FDZ7064NRochester Electronics |
MOSFET N-CH 30V 13.5A 30BGA |
|
|
FDPF44N25TRDTURochester Electronics |
MOSFET N-CH 250V 44A TO220F |
|
|
NVMFS5C404NLT1GRochester Electronics |
MOSFET N-CH 40V 49A/352A 5DFN |
|
|
IXTT10P60Wickmann / Littelfuse |
MOSFET P-CH 600V 10A TO268 |
|
|
FDPF16N50UTRochester Electronics |
MOSFET N-CH 500V 15A TO220F |
|
|
FQP630Rochester Electronics |
MOSFET N-CH 200V 9A TO220-3 |