







CRYSTAL 48.0000MHZ 18PF SMD
MOSFET N-CH 100V 66A TO263
SCR MOD PWR-BLOK 800V 200A
INSULATION DISPLACEMENT TERMINAL
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 66A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 11.6mOhm @ 33A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 88.8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6420 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 135W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
UF3C120080K4SUnitedSiC |
SICFET N-CH 1200V 33A TO247-4 |
|
|
IXTA260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO263 |
|
|
IPD50P03P4L11ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 50A TO252-31 |
|
|
RF1K4915496Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
PSMN6R0-30YL,115Nexperia |
MOSFET N-CH 30V 79A LFPAK56 |
|
|
AOB411LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 8A/78A TO263 |
|
|
SIHA24N65EF-E3Vishay / Siliconix |
MOSFET N-CHANNEL 650V 24A TO220 |
|
|
SQJQ410EL-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 135A PPAK 8 X 8 |
|
|
SPD04P10PGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 100V 4A TO252-3 |
|
|
FDS6162N3Rochester Electronics |
MOSFET N-CH 20V 21A 8SO |
|
|
IXFH140N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 140A TO247 |
|
|
BUK953R5-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
|
NTMFS5C410NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/300A 5DFN |