English
简体中文
MOSFET P-CH 20V 2.9A SOT23
MOSFET N-CHANNEL 60V 38A TO252
CONN RCPT 22POS 0.079 GOLD SMD
DIODE GEN PURP 150V 500MA DO35
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 110mOhm @ 2.2A, 10V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 715 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 350mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHB33N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A D2PAK |
|
SI3460BDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
AO4405EAlpha and Omega Semiconductor, Inc. |
MOSFET P-CHANNEL 30V 6A 8SOIC |
|
DMTH4005SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 20.9A PWRDI5060 |
|
NTLJS4149PTBGRochester Electronics |
MOSFET P-CH 30V 2.7A 6WDFN |
|
STF18N55M5STMicroelectronics |
MOSFET N-CH 550V 16A TO220FP |
|
IPLK70R900P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
DMP2165UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.5A SOT323 T&R |
|
NTE2987NTE Electronics, Inc. |
MOSFET N-CH 100V 20A TO220 |
|
FDB050AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/80A D2PAK |
|
SISA10DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK1212-8 |
|
IRFP4468PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 195A TO247AC |
|
2N7002ET1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |