English
简体中文
MOSFET N-CH 60V 200MA TO92-3
IC AMP CLASS AB STEREO SOT23-8
EMI PLASTIC TEST BOX A240-FRHF
LED CLUSTER T3 1/4 YLW 585NM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 50 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92-3 |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI80N04S204AKSA2Rochester Electronics |
MOSFET N-CH 40V 80A TO262-3 |
|
RQ6E050ATTCRROHM Semiconductor |
MOSFET P-CH 30V 5A TSMT6 |
|
IPP076N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 100A TO220-3 |
|
SI2347DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 5A SOT23-3 |
|
DMN13H750S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 130V 1A SOT23 |
|
DMN31D5UFZ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 220MA 3DFN |
|
AONS32310Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 60A/400A 8DFN |
|
SSM3J56MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 800MA VESM |
|
AUIRFS4115-7TRLIR (Infineon Technologies) |
MOSFET N-CH 150V 105A D2PAK |
|
IPP020N08N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A TO220-3 |
|
IRFR330BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPB18P06PRochester Electronics |
MOSFET P-CH 60V 18.7A D2PAK |
|
FQD20N06LETMRochester Electronics |
MOSFET N-CH 60V 17.2A DPAK |