English
简体中文
MOSFET N-CH 60V 2.5A 4DIP
DIODE SCHOTTKY 200V 3A DO214AC
COMMON MODE CHOKE 2LN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 640 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 4-DIP, Hexdip, HVMDIP |
| 包/箱: | 4-DIP (0.300", 7.62mm) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF1405-INFRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
APT50M50L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 89A 264 MAX |
|
FQA65N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 65A TO3PN |
|
FDD044AN03LRochester Electronics |
MOSFET N-CH 30V 21A/35A TO252AA |
|
PMPB10ENZNexperia |
MOSFET N-CH 30V 10A DFN2020MD-6 |
|
SQS840EN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 12A PPAK1212-8 |
|
FDU6680Rochester Electronics |
MOSFET N-CH 30V 12A/46A IPAK |
|
FDP12N50NZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
2SK3043Panasonic |
MOSFET N-CH 450V 5A TO220D-A1 |
|
SI1403BDL-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 1.4A SC70-6 |
|
IRLR110TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IPD50R380CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO252-3 |
|
STFU16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |