English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 74A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 34mOhm @ 37A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3660 pF/m @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 403W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D3PAK |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STS8N6LF6AGSTMicroelectronics |
MOSFET N-CHANNEL 60V 8A 8SO |
|
IPB60R180P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A D2PAK |
|
IPU95R450P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 14A TO251-3 |
|
SISS70DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 125V 8.5A/31A PPAK |
|
NTMS10P02R2Rochester Electronics |
MOSFET P-CH 20V 8.8A 8SOIC |
|
SI3457CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 5.1A 6TSOP |
|
FDS2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.9A 8SOIC |
|
IPD50R500CERochester Electronics |
IPD50R500 - 500V COOLMOS N-CHANN |
|
STF24N65M2STMicroelectronics |
MOSFET N-CH 650V 16A TO220FP |
|
IXFR230N20TWickmann / Littelfuse |
MOSFET N-CH 200V 156A ISOPLUS247 |
|
SI7720DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
|
SIHG180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO247AC |
|
BS170-D27ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
