English
简体中文
MEMS OSC XO 27.0000MHZ CMOS SMD
MOSFET N-CH 20V 100A LFPAK56
IC REG LINEAR 1.8V 1A SOT89-5
SFERNICE POTENTIOMETERS & TRIMME
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 2.7mOhm @ 25A, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 78 nC @ 4.5 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 5.85 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VN3205N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
|
NTTFS4C13NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A 8WDFN |
|
IPB60R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF624SPBFVishay / Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
|
NDD03N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.6A IPAK |
|
NTP5D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/139A TO220 |
|
5HP01M-TL-E-FSRochester Electronics |
MOSFET P-CH 50V 0.07A MCP3 |
|
IXTT6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO268 |
|
NTJS4405NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
IMZ120R045M1XKSA1IR (Infineon Technologies) |
SICFET N-CH 1200V 52A TO247-4 |
|
CSD18534Q5ATTexas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |
|
SN7002WH6433Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
RQ6E030ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |