







MOSFET N-CH 600V 4.5A DPAK
TERM BLK 5P SIDE ENTRY 15MM PCB
IC REG LIN POS ADJ 500MA 6WSON
MEMS OSC XO 3.6864MHZ CMOS SMD
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Tj) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 2.5Ohm @ 2.25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 670 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AUIRFU4104Rochester Electronics |
MOSFET N-CH 40V 42A TO251-3-21 |
|
|
STF28N60DM2STMicroelectronics |
MOSFET N-CH 600V 21A TO220FP |
|
|
PMPB40SNA115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
APT20M38BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 67A TO247 |
|
|
BUK6Y24-40PXNexperia |
MOSFET P-CH 40V 39A LFPAK56 |
|
|
IPD80R2K8CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.9A TO252-3 |
|
|
SPW12N50C3INRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
MMFTN170Diotec Semiconductor |
MOSFET N-CH 60V 500MA SOT23-3 |
|
|
SI4668DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 16.2A 8SO |
|
|
SI4840BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 19A 8SO |
|
|
MTB10N40ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPB160N04S3H2ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
|
IXFX420N10TWickmann / Littelfuse |
MOSFET N-CH 100V 420A PLUS247-3 |