English
简体中文
MOSFET N-CH 20V 18.1A PWRDI3333
68 TOROID
TERM BLK 3POS TOP ENTRY 5MM PCB
TRANSMITTER TOSA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 4.6mOhm @ 13.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 164 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 6495 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.05W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCTWA50N120STMicroelectronics |
SICFET N-CH 1200V 65A HIP247 |
|
IRFR221Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD16415Q5TTexas Instruments |
MOSFET N-CH 25V 100A 8VSON |
|
NDD01N60-1GRochester Electronics |
MOSFET N-CH 600V 1.5A IPAK |
|
AUIRFS3307ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
NVMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
IXFQ50N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
IPD25DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 6.5A TO252-3 |
|
IPD70R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO252-3 |
|
2SK4197FSRochester Electronics |
MOSFET N-CH 600V 3.3A TO220-3 |
|
IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
RJ1L08CGNTLLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTL |
|
CSD18533Q5ATTexas Instruments |
MOSFET N-CH 60V 17A/100A 8VSON |