English
简体中文
MEMS OSC XO 28.6363MHZ H/LV-CMOS
MOSFET N-CH 40V 80A TO263-3
CONN HDR STRIP SOLDER 8POS GOLD
FCT HOOD S1 0 DEG PLSTC W/SCRWLC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.5mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 6.9 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta), 115W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-3 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD20N03L27GRochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
SI7115DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |
|
STW48N60M2STMicroelectronics |
MOSFET N-CH 600V 42A TO247 |
|
IXTQ130N10TWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO3P |
|
R6006KND3TL1ROHM Semiconductor |
MOSFET N-CH 600V 6A TO252 |
|
SIR606DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 37A PPAK SO-8 |
|
AOTF190A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO220F |
|
IPP80R1K2P7Rochester Electronics |
IPP80R1K2 - 800V COOLMOS N-CHANN |
|
IXTY1R4N120PHVWickmann / Littelfuse |
MOSFET N-CH 1200V 1.4A TO252 |
|
IRFD9113Rochester Electronics |
-0.6A, -80V, 1.6 OHM, P-CHANNEL |
|
SISS26DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK1212-8S |
|
TBB1004DMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
SQM40022EM_GE3Vishay / Siliconix |
MOSFET N-CH 40V 150A TO263-7 |