







 
                            MOSFET N CH 100V 15A 8DFN
 
                            MOSFET P-CH 12V 80A PWRDI5060-8
 
                            IC SRAM 32KBIT PARALLEL 100TQFP
 
                            CONN HEADER VERT 26POS 2.54MM
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Not For New Designs | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 100 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 50A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 6V, 10V | 
| rds on (max) @ id, vgs: | 12.6mOhm @ 15A, 10V | 
| vgs(th) (最大值) @ id: | 3.4V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 2075 pF @ 50 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 6.25W (Ta), 83W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 8-DFN-EP (3.3x3.3) | 
| 包/箱: | 8-PowerWDFN | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | STW25N60M2-EPSTMicroelectronics | MOSFET N-CHANNEL 600V 18A TO247 | 
|   | FDD4243Sanyo Semiconductor/ON Semiconductor | MOSFET P-CH 40V 6.7A/14A DPAK | 
|   | TSM036N03PQ56 RLGTSC (Taiwan Semiconductor) | MOSFET N-CH 30V 124A 8PDFN | 
|   | IXTA1N200P3HVWickmann / Littelfuse | MOSFET N-CH 2000V 1A TO263 | 
|   | TJ80S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 80A DPAK | 
|   | IRF7580MTRPBFIR (Infineon Technologies) | MOSFET N-CH 60V 114A DIRECTFET | 
|   | SIR178DP-T1-RE3Vishay / Siliconix | MOSFET N-CH 20V 100A/430A PPAK | 
|   | BUK751R8-40E127Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | IXTH10N100D2Wickmann / Littelfuse | MOSFET N-CH 1000V 10A TO247 | 
|   | STW50N65DM6STMicroelectronics | MOSFET N-CH 650V 33A TO247-3 | 
|   | FDPF5N50TSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 500V 5A TO220F | 
|   | PSMN3R9-25MLC,115Nexperia | MOSFET N-CH 25V 70A LFPAK33 | 
|   | FDMC7660DCSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 30A/40A DLCOOL33 |