







 
                            MEMS OSC XO 33.33333MHZ H/LVCMOS
 
                            XTAL OSC VCXO 90.0000MHZ LVDS
 
                            MOSFET N-CH 100V 35A DPAK
 
                            CONN HEADER VERT 3POS
| 类型 | 描述 | 
|---|---|
| 系列: | HEXFET® | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 100 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 28.5mOhm @ 21A, 10V | 
| vgs(th) (最大值) @ id: | 4V @ 50µA | 
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 1.69 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 91W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | DPAK | 
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IMW120R045M1XKSA1IR (Infineon Technologies) | SICFET N-CH 1.2KV 52A TO247-3 | 
|   | FDB070AN06A0Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 15A/80A D2PAK | 
|   | SQ2361AEES-T1_BE3Vishay / Siliconix | MOSFET P-CH 60V 2.8A SOT23-3 | 
|   | IRFU3607TRL701PRochester Electronics | HEXFET POWER MOSFET | 
|   | BSS123Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 100V 170MA SOT23-3 | 
|   | NTTFS4928NTAGSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 30V 7.3A/37A 8WDFN | 
|   | IPAN60R180P7SXKSA1IR (Infineon Technologies) | MOSFET 600V TO220 FULL PACK | 
|   | AOB280LAlpha and Omega Semiconductor, Inc. | MOSFET N-CH 80V 20.5A/140A TO263 | 
|   | NTD4970N-1GRochester Electronics | MOSFET N-CH 30V 8.5A/36A IPAK | 
|   | BSC066N06NSATMA1IR (Infineon Technologies) | MOSFET N-CH 60V 64A TDSON-8-6 | 
|   | IXFK64N50Q3Wickmann / Littelfuse | MOSFET N-CH 500V 64A TO264AA | 
|   | ISL9N312AD3_NLRochester Electronics | N-CHANNEL POWER MOSFET | 
|   | YJL3134KW-F2-0000HF | N-CH MOSFET 20V 0.75A SOT-323 |