







MOSFET N-CH 100V 160A TO220SM
0.5 ONE-TOUCH ST 10P HT GND
DSUB CONT SIZE 8 PLUG SOLDER
.050 SOCKET DISCRETE CABLE ASSEM
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVIII-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 122 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10100 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 375W (Tc) |
| 工作温度: | 175°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-220SM(W) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPP65R115CFD7AAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO220-3 |
|
|
BSS126H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
|
FDMC7664Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.8A/24A 8MLP |
|
|
FDMS8020Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 26A/42A 8PQFN |
|
|
BUK9615-100E,118Rochester Electronics |
MOSFET N-CH 100V 66A D2PAK |
|
|
SQD25N15-52_GE3Vishay / Siliconix |
MOSFET N-CH 150V 25A TO252 |
|
|
IPD80R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO252 |
|
|
RYC002N05T316ROHM Semiconductor |
MOSFET N-CHANNEL 50V 200MA SST3 |
|
|
STF22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A TO220FP |
|
|
BSZ160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A 8TSDSON |
|
|
SIRC06DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 32A/60A PPAK SO8 |
|
|
FDBL0090N40Rochester Electronics |
MOSFET N-CH 40V 240A 8HPSOF |
|
|
NVMFS5C430NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 38A/200A 5DFN |