English
简体中文
MEMS OSC XO 50.0000MHZ H/LV-CMOS
MOSFET N-CH 600V 4A DPAK
XTAL OSC XO 16.0000MHZ CMOS SMD
SENSOR 100PSI M10-1.0 6G .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 760 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDA62N28Rochester Electronics |
MOSFET N-CH 280V 62A TO3PN |
|
5HN01C-TB-ERochester Electronics |
MOSFET N-CH 50V 100MA CP3 |
|
HUF75307D3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMT10H072LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 4A 6UDFN |
|
FDPF8N60ZUTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220F |
|
SPS02N60C3BKMA1Rochester Electronics |
MOSFET N-CH 600V 1.8A TO251-31 |
|
FDT457NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A SOT223-4 |
|
AUIRFSL8403Rochester Electronics |
MOSFET N-CH 40V 123A TO262 |
|
IPP60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20A TO220-3-1 |
|
IPB036N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 180A TO263-7 |
|
STP10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |
|
SISS28DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK1212-8S |
|
IRLZ44NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A TO220AB |