English
简体中文
FUSE BRD MNT 8A 72VAC 60VDC 2SMD
MEMS OSC XO 48.0000MHZ LVCMOS
MOSFET N-CH 650V 7A TO220
IC REG LINEAR 1.65V 1.5A TO263-5
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CE |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 650mOhm @ 2.1A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 210µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 440 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD4805N-35GRochester Electronics |
MOSFET N-CH 30V 12.7A/95A IPAK |
|
SIJ800DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 20A PPAK SO-8 |
|
IXTA170N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 170A TO263 |
|
CSD17570Q5BTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
IXTX90P20PWickmann / Littelfuse |
MOSFET P-CH 200V 90A PLUS247-3 |
|
FQPF5N30Rochester Electronics |
MOSFET N-CH 300V 3.9A TO220F |
|
PMN48XP,115Nexperia |
MOSFET P-CH 20V 4.1A 6TSOP |
|
IPP037N06L3GRochester Electronics |
MOSFET N-CH 60V 90A TO220-3 |
|
FDWS86369-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 65A POWER56 |
|
FQD3P50TM-AM002BLTSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A TO252 |
|
IPI084N06L3GXKSA1Rochester Electronics |
MOSFET N-CH 60V 50A TO262-3 |
|
SSM3J304T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 2.3A TSM |
|
2N7000RLRARochester Electronics |
MOSFET N-CH 60V 200MA TO92-3 |