







MEMS OSC XO 20.0000MHZ H/LV-CMOS
N-CHANNEL POWER MOSFET
IC OPAMP GP 4 CIRCUIT 14CDIP
COMP O= .094,L= .25,W= .005
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRF3709SPBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
|
SIR494DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 60A PPAK SO-8 |
|
|
BUK7M42-60EXNexperia |
MOSFET N-CH 60V 20A LFPAK33 |
|
|
IPA65R310CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
|
|
MMDF2N05ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
SIE818DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 60A 10POLARPAK |
|
|
HAT2279N-EL-ERochester Electronics |
MOSFET N-CH 80V 30A 8LFPAK |
|
|
BSC009NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 40A/100A TDSON |
|
|
FQPF11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |
|
|
FDG316PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
|
MTB60N05HDLT4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
HUFA75344P3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IXFA10N60PWickmann / Littelfuse |
MOSFET N-CH 600V 10A TO263 |