English
简体中文
0.51UH, 20%, 0.93MOHM, 33AMP MAX
XTAL OSC VCXO 90.0000MHZ HCSL
TRANS NPN 300V 200MA TO126-3
MOSFET N-CH 20V 2A 6WEMT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 105mOhm @ 2A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 2 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 180 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-WEMT |
| 包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
|
IRFR9120Rochester Electronics |
MOSFET P-CH 100V 5.6A DPAK |
|
SI7172DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
|
STL42P4LLF6STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
|
FQI5N60CTURochester Electronics |
MOSFET N-CH 600V 4.5A I2PAK |
|
IRFS7734TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 183A D2PAK |
|
IRLML2244TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 4.3A SOT23 |
|
STL8N10F7STMicroelectronics |
MOSFET N-CH 100V POWERFLAT |
|
TK6A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 6A TO220SIS |
|
IPD70R600P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO252-3 |