







 
                            NXV75UP/SOT23/TO-236AB
 
                            MOSFET N-CH 650V 20A TO220FP
 
                            XTAL OSC VCXO 10.0000MHZ HCMOS
 
                            PCB TERMINAL
| 类型 | 描述 | 
|---|---|
| 系列: | TrenchMOS™ | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 20 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 1.8A (Ta) | 
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V | 
| rds on (max) @ id, vgs: | 90mOhm @ 1.8A, 4.5V | 
| vgs(th) (最大值) @ id: | 1V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 4.5 V | 
| vgs (最大值): | ±8V | 
| 输入电容 (ciss) (max) @ vds: | 330 pF @ 10 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 340mW (Ta), 2.1W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | TO-236AB | 
| 包/箱: | TO-236-3, SC-59, SOT-23-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | SCT20N120AGSTMicroelectronics | SICFET N-CH 1200V 20A HIP247 | 
|   | IPP60R750E6Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | RF1K49156Rochester Electronics | N-CHANNEL POWER MOSFET | 
|   | FDB060AN08A0Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 75V 16A/80A D2PAK | 
|   | STP80NF55STMicroelectronics | MOSFET N-CH 55V 80A TO220 | 
|   | FQP44N08Rochester Electronics | MOSFET N-CH 80V 44A TO220-3 | 
|   | DMN7022LFG-13Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 75V 7.8A PWRDI3333-8 | 
|   | FDU6676ASRochester Electronics | MOSFET N-CH 30V 90A IPAK | 
|   | APT10M11LVRGRoving Networks / Microchip Technology | MOSFET N-CH 100V 100A TO264 | 
|   | UJ4C075018K4SUnitedSiC | SICFET N-CH 750V 81A TO247-4 | 
|   | BUK6D77-60EXNexperia | MOSFET N-CH 60V 3.4A/10.6A 6DFN | 
|   | RSR025N05HZGTLROHM Semiconductor | MOSFET N-CH 45V 2.5A TSMT3 | 
|   | NTD4860NA-1GRochester Electronics | MOSFET N-CH 25V 10.4A/65A IPAK |