English
简体中文
MOSFET N-CH 650V 6.8A TO220SIS
SCHOTTKY DIODE SIC 1200V 15A
XTAL OSC XO 72.0000MHZ LVPECL
SWITCH SNAP ACTION SPDT 22A 250V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 780mOhm @ 3.4A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFF9122Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RTF015P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3 |
|
FDMS86263PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 4.4A/22A 8PQFN |
|
STO67N60DM6STMicroelectronics |
MOSFET N-CH 600V 33A TOLL |
|
BSC160N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8.8A/42A TDSON |
|
STD6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A DPAK |
|
DN3545N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 450V 136MA TO92 |
|
NVMFS4C05NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24.7A/116A 5DFN |
|
SFR9214TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMK30EP518Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSZ0905PNSATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 40A TDSON-8 |
|
AUIRFP1405Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
DMN63D8L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT23-3 |