| 类型 | 描述 | 
|---|---|
| 系列: | aMOS™ | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 600 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 37A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 109mOhm @ 21A, 10V | 
| vgs(th) (最大值) @ id: | 3.8V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 2154 pF @ 100 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 417W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | TO-263 (D²Pak) | 
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | AUIRF7738L2TRRochester Electronics | MOSFET N-CH 40V 35A/130A DIRECT | 
|   | DMP2010UFG-13Zetex Semiconductors (Diodes Inc.) | MOSFET P-CH 20V 12.7A PWRDI3333 | 
|   | BUK7507-55B,127Rochester Electronics | PFET, 119A I(D), 55V, 0.0071OHM, | 
|   | AONR34332CAlpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 48A/50A 8DFN | 
|   | IPP50CN10NGXKSA1Rochester Electronics | MOSFET N-CH 100V 20A TO220-3 | 
|   | IXTA96P085TWickmann / Littelfuse | MOSFET P-CH 85V 96A TO263 | 
|   | SQ3426EV-T1_BE3Vishay / Siliconix | MOSFET N-CHANNEL 60V 7A 6TSOP | 
|   | BSZ018NE2LSATMA1IR (Infineon Technologies) | MOSFET N-CH 25V 23A/40A TSDSON | 
|   | SISH112DN-T1-GE3Vishay / Siliconix | MOSFET N-CH 30V 11.3A PPAK | 
|   | IRFSL3306PBFIR (Infineon Technologies) | MOSFET N-CH 60V 120A TO262 | 
|   | IPL65R1K5C6SATMA1Rochester Electronics | MOSFET N-CH 650V 3A THIN-PAK | 
|   | STB9NK90ZSTMicroelectronics | MOSFET N-CH 900V 8A D2PAK | 
|   | IXFT30N85XHVWickmann / Littelfuse | MOSFET N-CH 850V 30A TO268 |