







RELAY CONT H-BRG 250VDC 6A
TRANSISTOR >30MHZ
INSULATION DISPLACEMENT TERMINAL
1YR EXT.WARRANTY FOR S1K520
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 169 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 12.03 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 349W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPI037N08N3GXKSA1Rochester Electronics |
MOSFET N-CH 80V 141A TO262-3 |
|
|
IRF9Z24PBFVishay / Siliconix |
MOSFET P-CH 60V 11A TO220AB |
|
|
DMT10H072LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 4A 6UDFN |
|
|
CSD19535KTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
|
FQI47P06TURochester Electronics |
MOSFET P-CH 60V 47A I2PAK |
|
|
IRF9Z14SPBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A D2PAK |
|
|
BUZ76ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SK8403190LPanasonic |
MOSFET N-CH 30V 10A 8HSSO |
|
|
FCPF400N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 11A TO220F |
|
|
RM180N100T2Rectron USA |
MOSFET N-CH 100V 180A TO220-3 |
|
|
IXFA90N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 90A TO263AA |
|
|
IPP028N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
|
STD46N6F7STMicroelectronics |
MOSFET N-CH 60V 15A DPAK |