English
简体中文
FIXED IND 68UH 560MA 1.2 OHM SMD
MOSFET N-CH 60V 250MA EMT3
MOSFET N-CH 30V 79A LFPAK56
CRYSTAL 37.0000MHZ 10PF SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 250mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 2.4Ohm @ 250mA, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 15 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | EMT3 |
| 包/箱: | SC-75, SOT-416 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP023N10N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO220-3 |
|
RQ5E030AJTCLROHM Semiconductor |
MOSFET N-CHANNEL 30V 3A TSMT3 |
|
STP9NK90ZSTMicroelectronics |
MOSFET N-CH 900V 8A TO220AB |
|
AUIRL3705NRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
FCI25N60NRochester Electronics |
MOSFET N-CH 600V 25A I2PAK |
|
SI5448DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 25A PPAK |
|
AOWF20S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262F |
|
FQPF5P10Rochester Electronics |
MOSFET P-CH 100V 2.9A TO220F |
|
AOW12N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 12A TO262 |
|
IRF9Z20Vishay / Siliconix |
MOSFET P-CH 50V 9.7A TO220AB |
|
APT5010B2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 47A T-MAX |
|
IRFP460BPBFVishay / Siliconix |
MOSFET N-CH 500V 20A TO247AC |
|
IRFR120PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |