English
简体中文
MEMS OSC XO 28.6363MHZ H/LV-CMOS
MOSFET N-CH 100V 8A/33A 5DFN
DIODE GEN PURP 100V 5A DO214AB
LAPPING FILM A/O 9U 150'X4"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta), 33A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 24mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13.5 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 905 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 62W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT12080LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 16A TO264 |
|
IRLR8726PBFRochester Electronics |
MOSFET N-CH 30V 86A DPAK |
|
IPB80N04S2L03ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
SIE874DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 60A 10POLARPAK |
|
IPD75N04S406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS86267PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2.2A 8SOIC |
|
MCB130N10Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 130A D2PAK |
|
IRFS7730TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 75V 240A D2PAK |
|
SPB03N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 3.2A TO263-3 |
|
STP8NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 6.2A TO220FP |
|
IRFL014NPBFRochester Electronics |
MOSFET N-CH 55V 1.9A SOT223 |
|
SFP9Z34Rochester Electronics |
MOSFET P-CH 60V 18A TO220-3 |
|
APT5018SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 27A D3PAK |