







XTAL OSC VCXO 135.0000MHZ HCSL
MEMS OSC XO 27.0000MHZ H/LV-CMOS
MOSFET P-CH 60V 7.3A TSOT26
DIODE ZENER 24V 1W DO214AC
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.3A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 105mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 969 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.8W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSOT-26 |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI4427BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9.7A 8SO |
|
|
IRFD110PBFVishay / Siliconix |
MOSFET N-CH 100V 1A 4DIP |
|
|
IRF200P222IR (Infineon Technologies) |
MOSFET N-CH 200V 182A TO247AC |
|
|
STP6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A TO220 |
|
|
SIR164ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35.9A/40A PPAK |
|
|
STL55NH3LLSTMicroelectronics |
MOSFET N-CH 30V 55A POWERFLAT |
|
|
SUP90142E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 90A TO220AB |
|
|
IXFY8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO252AA |
|
|
IRFR420TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
|
FDB2572Rochester Electronics |
MOSFET N-CH 150V 4A/29A TO263AB |
|
|
TN0620N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
|
TK560P65Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 650V 7A DPAK |
|
|
IPA65R600E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-FP |