English
简体中文
MOSFET P-CH 40V 9.1A 8SO
CABLE GLAND 6-12MM PG13.5 POLY
IC HOT SWAP CTRLR GP 8SOIC
RECTIFIER DIODE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 9.8A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 47.5 nC @ 5 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 4234 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.45W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMG4800LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10A TO252-3 |
|
IRL640STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 17A D2PAK |
|
STB37N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 28A D2PAK |
|
IXFR24N90PWickmann / Littelfuse |
MOSFET N-CH 900V 13A ISOPLUS247 |
|
SFM9014TFRochester Electronics |
MOSFET P-CH 60V 1.8A SOT223-4 |
|
IXTN8N150LWickmann / Littelfuse |
MOSFET N-CH 1500V 7.5A SOT-227B |
|
NVMFS5C442NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/127A 5DFN |
|
TPN4R712MD,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 36A 8TSON |
|
BUK7Y25-40B,115Rochester Electronics |
TRANSISTOR >30MHZ |
|
STD7NM60NSTMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IRFSL7530PBFRochester Electronics |
MOSFET N-CH 60V 195A TO262 |
|
IPD50R800CEBTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
RJK60S5DPN-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |