







 
                            MOSFET N-CH 600V 4A TO220-3F
 
                            CONN RCPT 4POS 0.1 GOLD PCB
 
                            CONN RCPT HSG FMALE 3POS PNL MT
 
                            CONN EDGE DUAL FMALE 50POS 0.156
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 600 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 2.2Ohm @ 2A, 10V | 
| vgs(th) (最大值) @ id: | 4.5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V | 
| vgs (最大值): | ±30V | 
| 输入电容 (ciss) (max) @ vds: | 615 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 35W (Tc) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-220-3F | 
| 包/箱: | TO-220-3 Full Pack | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | FDD9509L-F085Sanyo Semiconductor/ON Semiconductor | MOSFET P-CH 40V 90A DPAK | 
|   | DMT12H090LFDF4-7Zetex Semiconductors (Diodes Inc.) | MOSFET N-CH 115V 3.4A 6DFN | 
|   | IRF840ASTRRPBFVishay / Siliconix | MOSFET N-CH 500V 8A D2PAK | 
|   | IPP030N10N3GXKSA1IR (Infineon Technologies) | MOSFET N-CH 100V 100A TO220-3 | 
|   | 2N7002-HFComchip Technology | MOSFET N-CH 60V 250MA SOT23 | 
|   | BSP318SH6327XTSA1IR (Infineon Technologies) | MOSFET N-CH 60V 2.6A SOT223-4 | 
|   | ISL9N303AS3Rochester Electronics | MOSFET N-CH 30V 75A I2PAK | 
|   | RD3U080CNTL1ROHM Semiconductor | MOSFET N-CH 250V 8A TO252 | 
|   | RQ6E035ATTCRROHM Semiconductor | MOSFET P-CH 30V 3.5A TSMT6 | 
|   | IPB90N06S404ATMA2Rochester Electronics | MOSFET N-CH 60V 90A D2PAK | 
|   | RTL020P02FRATRROHM Semiconductor | MOSFET P-CH 20V 2A TUMT6 | 
|   | TP65H300G4LSGTransphorm | GANFET N-CH 650V 6.5A 3PQFN | 
|   | IRFS3006-7PPBFRochester Electronics | HEXFET N-CHANNEL POWER MOSFET |