English
简体中文
MOSFET N-CH 600V 5A DPAK
CONN RCPT 20POS 0.039 GOLD SMD
TVS
PRIORITY KEYLOCK SWITCH IP54 2X9
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ DM2 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.1Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.2 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 274 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR7843TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 161A DPAK |
|
PHT11N06LT,135Rochester Electronics |
MOSFET N-CH 55V 4.9A/10.7A SC73 |
|
BUK9M10-30EXNexperia |
MOSFET N-CH 30V 54A LFPAK33 |
|
STD10P10F6STMicroelectronics |
MOSFET P-CH 100V 10A DPAK |
|
DMP2010UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 12.7A PWRDI3333 |
|
STP21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A TO220AB |
|
DMN2230U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23-3 |
|
SFT1345-HRochester Electronics |
MOSFET P-CH 100V 11A TP |
|
SI7328DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
|
FDMS8670SRochester Electronics |
MOSFET N-CH 30V 20A/42A 8PQFN |
|
IRLB3036PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
SPD04N60S5Rochester Electronics |
MOSFET N-CH 600V 4.5A TO252-3 |
|
FCH47N60-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 47A TO247-3 |