







MEMS OSC XO 166.6000MHZ LVCMOS
RF N-CHANNEL, JUNCTION FET
IC OR CTRLR SRC SELECT 16DFN
IC SRAM 4.5MBIT PARALLEL 100TQFP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 晶体管型: | N-Channel JFET |
| 频率: | - |
| 获得: | - |
| 电压测试: | 10 V |
| 额定电流(安培): | 60mA |
| 噪声系数: | - |
| 电流测试: | 10 mA |
| 功率输出: | - |
| 额定电压: | 25 V |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | SOT-23-3 (TO-236) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MRF6VP3450HR6Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
BLC9H10XS-60PZAmpleon |
BLC9H10XS-60P/SOT1273/TRAYDP |
|
|
BLS7G2933S-150,112Rochester Electronics |
RF PFET, 1-ELEMENT, S BAND, SILI |
|
|
BLF6G13LS-250P,112Ampleon |
RF MOSFET LDMOS 50V LDMOST |
|
|
BLS8G2731LS-400PUAmpleon |
RF FET LDMOS 65V 13DB SOT539B |
|
|
SD57060-10STMicroelectronics |
FET RF 65V 945MHZ M243 |
|
|
BLS7G3135LS-200UAmpleon |
RF FET LDMOS 65V 12DB SOT502B |
|
|
BLF7G20LS-200,118Ampleon |
RF FET LDMOS 65V 18DB SOT502B |
|
|
NE3515S02-T1D-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
BLF6G38-10G,112Ampleon |
RF FET LDMOS 65V 14DB SOT975C |
|
|
MRF6P18190HR6Rochester Electronics |
RF K BAND, N-CHANNEL |
|
|
BLC9H10XS-600AZAmpleon |
BLC9H10XS-600A/SOT1250/TRAYDP |
|
|
BLF8G22LS-140UAmpleon |
RF FET LDMOS 65V 18.5DB SOT502B |