English
简体中文
MEMS OSC XO 8.1920MHZ H/LV-CMOS
IRF530 - 400V HEXFET, N-CHANNEL
IC EEPROM 1KBIT SPI 2MHZ 8DIP
INSULATION DISPLACEMENT TERMINAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | - |
| 频率: | - |
| 获得: | - |
| 电压测试: | - |
| 额定电流（安培）: | - |
| 噪声系数: | - |
| 电流测试: | - |
| 功率输出: | - |
| 额定电压: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2534-TL-ERochester Electronics |
NCH 10V DRIVE SERIES |
|
MD7P19130HSR5Rochester Electronics |
FET RF 2CH 65V 1.99GHZ NI780HS-4 |
|
CGH27030SWolfspeed - a Cree company |
RF MOSFET HEMT 28V 12DFN |
|
MRF6S19140HR3Rochester Electronics |
RF L BAND, N-CHANNEL |
|
GTVA104001FA-V1Wolfspeed - a Cree company |
350W SI LDMOS, 50V, 1200-1400MHZ |
|
BLP05H635XRGYAmpleon |
RF FET LDMOS 135V 27DB SOT12242 |
|
GTVA123501FA-V1Wolfspeed - a Cree company |
350W GAN HEMT, 50V, 1.2-1.4GHZ |
|
BLP9H10-30GZAmpleon |
BLP9H10-30G/SOT1483/REELDP |
|
BLM7G1822S-20PBGYAmpleon |
RF FET LDMOS 65V 32.3DB SOT12121 |
|
BLL6H0514L-130,112Ampleon |
RF FET LDMOS 100V 17DB SOT1135A |
|
BLC9G27LS-151AVYAmpleon |
RF FET LDMOS 65V 15.6DB SOT12753 |
|
BLF888B,112Ampleon |
RF FET LDMOS 104V 21DB SOT539A |
|
A2T21H360-24SR6NXP Semiconductors |
IC TRANS RF LDMOS |