







120W GAN HEMT 28V 8.0GHZ DIE, G2
COPPER PATCH CORD, CAT 6A (SD),
DIODE SCHOTTKY 3.0A SMC
INSULATION DISPLACEMENT SOCKET C
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tray |
| 零件状态: | Active |
| 晶体管型: | - |
| 频率: | - |
| 获得: | - |
| 电压测试: | - |
| 额定电流(安培): | - |
| 噪声系数: | - |
| 电流测试: | - |
| 功率输出: | - |
| 额定电压: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MRF7P20040HSR3NXP Semiconductors |
FET RF 2CH 65V 2.03GHZ NI780HS-4 |
|
|
IRF225Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
|
CLF1G0035-100PRochester Electronics |
RF SMALL SIGNAL FIELD-EFFECT TRA |
|
|
BLA1011S-200R,112Rochester Electronics |
RF TRANSISTOR |
|
|
NPT35015DMetelics (MACOM Technology Solutions) |
HEMT N-CH 28V 18W 3300-3800MHZ |
|
|
BLC10G18XS-360AVTYAmpleon |
BLC10G18XS-360AV/SOT1258/REELD |
|
|
BLC2425M10LS500PZAmpleon |
BLC2425M10LS500P/SOT1250/TRAYDP |
|
|
HIP5010ISRochester Electronics |
COMPLEMENTARY DRIVE HALF-BRIDGE |
|
|
BLS6G3135S-20,112Rochester Electronics |
RF PFET, 1-ELEMENT, S BAND, SILI |
|
|
2N5485NTE Electronics, Inc. |
T-JFET N CHANNEL |
|
|
MRF6S20010GNR1NXP Semiconductors |
RF MOSFET LDMOS 28V TO270-2 GULL |
|
|
BLA9G1011L-300GUAmpleon |
RF MOSFET LDMOS 32V SOT502F |
|
|
BLC2425M9LS250ZAmpleon |
RF FET LDMOS 65V 18.5DB SOT12701 |