







MOSFET 2N-CH 450V 0.4A 8SOIC
TERM BLOCK HDR 2POS VERT 5MM
AMPLIFIER
AMPLIFIER
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 450V |
| 电流 - 连续漏极 (id) @ 25°c: | 400mA |
| rds on (max) @ id, vgs: | 4.5Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 160pF @ 25V |
| 功率 - 最大值: | 1.6W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DMG1016VQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
|
NVMFD5852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
|
SSM6L36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
|
|
ECH8653-S-TL-HRochester Electronics |
MOSFET 2N-CH 20V 7.5A ECH8 |
|
|
BSL306NH6327XTSA1Rochester Electronics |
BSL306 - 250V-600V SMALL SIGNAL |
|
|
MCH6663-TL-HRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
|
SSM6N7002KFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.3A |
|
|
AUIRFS4410ZTRL-INFRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
|
MSCM20XM16F4GRoving Networks / Microchip Technology |
PM-MOSFET-FREDFET-7-SP4 |
|
|
ECH8659-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8 |
|
|
DMN3401LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
|
NTMD6N02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3.92A 8SOIC |
|
|
NTLUD3A260PZTBGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |