English
简体中文
MOSFET N-CH 60V 16.3A/70A TO252
TRANS NPN/PNP PREBIAS 0.3W SM6
OSC XO 160MHZ 1.8V CML
INSULATION DISPLACEMENT SOCKET C
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 晶体管型: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| 电流 - 集电极 (ic) (max): | 100mA |
| 电压 - 集电极发射极击穿（最大值）: | 50V |
| 电阻器 - 基极 (r1): | 10kOhms |
| 电阻器 - 发射极基极 (r2): | - |
| 直流电流增益 (hfe) (min) @ ic, vce: | 120 @ 1mA, 5V |
| vce 饱和度（最大值）@ ib, ic: | 300mV @ 250µA, 5mA |
| 电流 - 集电极截止（最大值）: | 100nA (ICBO) |
| 频率转换: | 200MHz |
| 功率 - 最大值: | 300mW |
| 安装类型: | Surface Mount |
| 包/箱: | SC-74, SOT-457 |
| 供应商设备包: | SM6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NSBA114EDXV6T5Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
NSBC114EDXV6T5GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2NPN 50V SOT563 |
|
PEMD6,115Nexperia |
TRANS PREBIAS NPN/PNP 50V SOT666 |
|
DDA123JU-7-FZetex Semiconductors (Diodes Inc.) |
TRANS 2PNP PREBIAS 0.2W SOT363 |
|
NSTB60BDW1T1Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
UMF5NTRROHM Semiconductor |
TRANS NPN PREBIAS/PNP 0.15W UMT6 |
|
RN2911FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS 2PNP PREBIAS 0.1W ES6 |
|
RN4604(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS NPN/PNP PREBIAS 0.3W SM6 |
|
MUN5215DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS 2NPN PREBIAS 0.25W SOT363 |
|
MUN5115DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 2PNP 50V SC88 |
|
RN1966FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS 2NPN PREBIAS 0.1W ES6 |
|
MUN5314DW1T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS 1NPN 1PNP 50V SC88 |
|
NSBC144EPDXV6T5GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN/PNP 50V SOT563 |