English
简体中文
RECTIFIER DIODE, 0.2A, 250V
DIODE ZENER 7.5V 1W DO41
DIODE ZENER 13V 5W T18
INSULATION DISPLACEMENT TERMINAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 13 V |
| 宽容: | ±20% |
| 功率 - 最大值: | 5 W |
| 阻抗（最大）（zzt）: | 2.5 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 9.4 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
JTX1N4475USSemtech |
DIODE ZENER 27V 1.5W |
|
|
RD2.2FRochester Electronics |
DIODE ZENER |
|
|
SMBG5379AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 110V 5W SMBG |
|
|
CDLL4765ARoving Networks / Microchip Technology |
DIODE ZENER |
|
|
JANTXV1N746CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AA |
|
|
BZX584C10-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER IND 300MW SOD523 |
|
|
1N6353USRoving Networks / Microchip Technology |
DIODE ZENER |
|
|
JAN1N6313CRoving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
|
HZ6A1JRochester Electronics |
DIODE ZENER |
|
|
1N5351B/TR8Roving Networks / Microchip Technology |
DIODE ZENER 14V 5W T18 |
|
|
SMBG5375CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 82V 5W SMBG |
|
|
BZX584C5V6-HG3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER AUTO 300MW SOD523 |
|
|
JANTXV1N4964CRoving Networks / Microchip Technology |
DIODE ZENER 18V 5W E AXIAL |