English
简体中文
XTAL OSC VCXO 223.0000MHZ LVDS
DIODE ZENER 9.1V 500MW DO35
.050 X .050 C.L. FEMALE IDC ASSE
IC EEPROM 1K I2C 4MHZ M2 P
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 9.1 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 10 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 7 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZT52B5V6-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 410MW SOD123 |
|
SZ1SMA5943BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 56V 1.5W SMA |
|
JAN1N4121UR-1Roving Networks / Microchip Technology |
DIODE ZENER 33V DO213AA |
|
1PGSMA4742 M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 12V 1.25W DO214AC |
|
JANTX1N4121UR-1Roving Networks / Microchip Technology |
DIODE ZENER 33V 500MW DO213AA |
|
GDZ3V6B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 200MW SOD323 |
|
JANTX1N747A-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
BZD27B9V1P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 800MW DO219AB |
|
BZX384C39-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 200MW SOD323 |
|
SMBJ4747AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 20V 2W SMBJ |
|
1N5942BP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 51V 1.5W DO204AL |
|
CDLL749ARoving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO213AB |
|
BZX84W-C20FNexperia |
DIODE ZENER 20V 275MW SOT323 |