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| 类型 | 描述 |
|---|---|
| 系列: | POWERMITE® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 87 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 250 Ohms |
| 电流 - 反向泄漏@ vr: | 10 nA @ 66.12 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | DO-216 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JANTX1N966CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO213AA |
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BZX585-C24,115Nexperia |
DIODE ZENER 24V 300MW SOD523 |
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BZT52C13-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 410MW SOD123 |
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BZD27B110P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
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JANTX1N3030DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 27V 1W DO213AB |
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PZU20B2L,315Nexperia |
DIODE ZENER 20V 250MW DFN1006-2 |
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MMBZ4624-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 350MW SOT23-3 |
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BZG03C200-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 200V 1.25W DO214AC |
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1N5918AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 1.5W DO204AL |
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BZT52B3V0S-F2-0000HF |
ZENER DIODE 3.0V 0.2W SOD-323 |
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EDZVT2R2.7BROHM Semiconductor |
DIODE ZENER 2.7V 150MW EMD2 |
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TZMC30-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW SOD80 |
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BZT52-B2V7JNexperia |
DIODE ZENER 2.7V 590MW SOD123 |
