







(45-1F40.2010.000.108)
SILICON CARBIDE POWER DIODE
SENSOR 3000PSI M10-1.0 6G 4.5V
AMPLIFIER
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 1.6 V @ 5 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 50 µA @ 1200 V |
| 电容@vr, f: | 250pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220AC |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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