







RES SMD 365 OHM 0.1% 1/10W 0805
FIXED IND 6.2NH 300MA 300 MOHM
DC-DC ISOLATED, 10 W, 4 1 VDC IN
STD 1A, CASE TYPE: DO-41
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2 µs |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 15pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
R7220805ESOOPowerex, Inc. |
DIODE GEN PURP 800V 500A DO200AB |
|
|
RS3KB-HFComchip Technology |
RECTIFIER FAST RECOVERY 800V 3A |
|
|
HT12G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
|
HSM550G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 50V 5A DO215AB |
|
|
MBR8035RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO5 |
|
|
EH 1V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 600MA AXIAL |
|
|
6A10GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 6A R-6 |
|
|
R9G03012XXPowerex, Inc. |
DIODE GP 3KV 1200A DO200AA R62 |
|
|
FR6GR02GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 6A DO4 |
|
|
1N6306Roving Networks / Microchip Technology |
RECTIFIER DIODE |
|
|
JAN1N4459RRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 15A DO203AA |
|
|
1N5286UR-1Roving Networks / Microchip Technology |
CURRENT REGULATOR DIODE |
|
|
VS-87HF120MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |