







 
                            MEMS OSC XO 48.0000MHZ LVCMOS LV
 
                            256KX18 SRAM
 
                            MOSFET N-CH 1000V 10A TO247AD
 
                            DIODE GEN PURP 600V 10A SLIMDPAK
| 类型 | 描述 | 
|---|---|
| 系列: | Automotive, AEC-Q101, eSMP® | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Active | 
| 二极管型: | Standard | 
| 电压 - 直流反向 (vr) (max): | 600 V | 
| 电流 - 平均整流 (io): | 10A | 
| 电压 - 正向 (vf) (max) @ if: | 1.14 V @ 10 A | 
| 速度: | Standard Recovery >500ns, > 200mA (Io) | 
| 反向恢复时间 (trr): | 2.6 µs | 
| 电流 - 反向泄漏@ vr: | 20 µA @ 600 V | 
| 电容@vr, f: | 78pF @ 4V, 1MHz | 
| 安装类型: | Surface Mount | 
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| 供应商设备包: | SlimDPAK | 
| 工作温度 - 结: | -55°C ~ 175°C | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | JAN1N1188RRoving Networks / Microchip Technology | DIODE GEN PURP 400V 35A DO203AB | 
|   | JTXV1N5617Semtech | D MET 1A FAST 400V HRV | 
|   | SFT11G R0GTSC (Taiwan Semiconductor) | DIODE GEN PURP 50V 1A TS-1 | 
|   | A177DPowerex, Inc. | DIODE GEN PURP 400V 100A DO205AA | 
|   | HER603G A0GTSC (Taiwan Semiconductor) | DIODE GEN PURP 200V 6A R-6 | 
|   | RHRG7570Rochester Electronics | RECTIFIER DIODE | 
|   | JTX1N4947Semtech | D MET 1A FAST 800V HR | 
|   | RM 1V1Sanken Electric Co., Ltd. | DIODE GEN PURP 400V 1A AXIAL | 
|   | 1N1127Roving Networks / Microchip Technology | STANDARD RECTIFIER | 
|   | SFT18G A1GTSC (Taiwan Semiconductor) | DIODE GEN PURP 600V 1A TS-1 | 
|   | XBS023P11R-GTorex Semiconductor Ltd. | SCHOTTKY BARRIER DIODE | 
|   | BYG24JHE3_A/IVishay General Semiconductor – Diodes Division | DIODE AVALANCHE 600V 1.5A DO214 | 
|   | 1N3910RRoving Networks / Microchip Technology | FAST RECOVERY RECTIFIER |