







 
                            MEMS OSC XO 7.3728MHZ H/LV-CMOS
 
                            MEMS OSC XO 74.175824MHZ H/LV-CM
 
                            1A 400V ESD CAPABILITY RECTIFIER
 
                            .050 X .050 C.L. FEMALE IDC ASSE
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 二极管型: | Standard | 
| 电压 - 直流反向 (vr) (max): | 400 V | 
| 电流 - 平均整流 (io): | 1A | 
| 电压 - 正向 (vf) (max) @ if: | - | 
| 速度: | Standard Recovery >500ns, > 200mA (Io) | 
| 反向恢复时间 (trr): | - | 
| 电流 - 反向泄漏@ vr: | 1 µA @ 400 V | 
| 电容@vr, f: | 14pF @ 4V, 1MHz | 
| 安装类型: | Surface Mount | 
| 包/箱: | DO-214AC, SMA | 
| 供应商设备包: | DO-214AC (SMA) | 
| 工作温度 - 结: | -55°C ~ 175°C | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | VS-ETU1506STRR-M3Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600V 15A TO263AB | 
|   | NTE588NTE Electronics, Inc. | DIODE GEN PURP 150V 3A DO27 | 
|   | S5K-E3/9ATVishay General Semiconductor – Diodes Division | DIODE GEN PURP 800V 5A DO214AB | 
|   | S3BHR7GTSC (Taiwan Semiconductor) | DIODE GEN PURP 100V 3A DO214AB | 
|   | LS101A-GS18Vishay General Semiconductor – Diodes Division | DIODE SCHOTTKY 60V 30MA SOD80 | 
|   | SS2FH10-M3/HVishay General Semiconductor – Diodes Division | DIODE SCHOTTKY 100V 2A DO-219AB | 
|   | ES2D-E3/5BTVishay General Semiconductor – Diodes Division | DIODE GEN PURP 200V 2A DO214AA | 
|   | STPS560SFYSTMicroelectronics | AUTOMOTIVE 60 V 5 A LOW DROP LOW | 
|   | ER3JB-TPMicro Commercial Components (MCC) | DIODE GEN PURP 600V 3A DO214AA | 
|   | NSVR201MXT5GSanyo Semiconductor/ON Semiconductor | RF SCHOTTKY BARRIER DIODE | 
|   | BAT54LT1Rochester Electronics | DIODE SCHOTTKY 30V 200MA SOT23-3 | 
|   | ES2FHE3_A/IVishay General Semiconductor – Diodes Division | DIODE GEN PURP 300V 2A DO214AA | 
|   | UF4006Sanyo Semiconductor/ON Semiconductor | DIODE GEN PURP 800V 1A DO204AL |