English
简体中文
RES 7.5K OHM 1/2W 1% AXIAL
CAP MICA 240PF 2% 500V RADIAL
DIODE GEN PURP 1.2KV 320A DO205
D55342H 50PPM 1206 26.7K 0.1% R
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 320A |
| 电压 - 正向 (vf) (max) @ if: | 1.33 V @ 750 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 15 mA @ 1200 V |
| 电容@vr, f: | - |
| 安装类型: | Stud Mount |
| 包/箱: | DO-205AB, DO-9, Stud |
| 供应商设备包: | DO-205AB, DO-9 |
| 工作温度 - 结: | -40°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE548NTE Electronics, Inc. |
R-SI MICRO OVEN 12KV |
|
VS-10ETS08FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 10A TO220-2 |
|
VS-60APU06HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
|
SS26L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
1N4004E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
MPG06DHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
1N3214RGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 15A DO5 |
|
VS-70HFR140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
|
RFN2LAM4STFTRROHM Semiconductor |
RFN2LAM4STF IS THE HIGH RELIABIL |
|
BAS381-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA MICROMLF |
|
RS3DB-T R5GTSC (Taiwan Semiconductor) |
150NS 3A 200V FAST RECOVERY RECT |
|
1N4938-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO35 |
|
SL13-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO214AC |