







XTAL OSC VCXO 140.0000MHZ LVDS
MEMS OSC XO 33.33333MHZ H/LVCMOS
TRANS PN P 100V TO220
DIODE GEN PURP 600V 15A TO263-2
| 类型 | 描述 |
|---|---|
| 系列: | Stealth™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 15A |
| 电压 - 正向 (vf) (max) @ if: | 2.2 V @ 15 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 40 ns |
| 电流 - 反向泄漏@ vr: | 100 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | TO-263 (D²Pak) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
VS-HFA04TB60S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
|
|
CD214A-R12000J.W. Miller / Bourns |
DIODE GEN PURP 2KV 1A SMA |
|
|
SE40PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2.4A TO277A |
|
|
AR4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
|
|
1N6642USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |
|
|
RB521VM-40FHTE-17ROHM Semiconductor |
RB521VM-40FH IS SUPER LOW V |
|
|
FMY-1106SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
|
ACDBA260LR-HFComchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
|
|
SS1FH6HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
|
UGB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
|
APTDF500U40GRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 500A LP4 |
|
|
UFS510J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 5A DO214AB |
|
|
VS-MBR735-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |