English
简体中文
MEMS OSC XO 77.7600MHZ H/LV-CMOS
MEMS OSC XO 33.3000MHZ LVCMOS LV
DIODE GEN PURP 600V 15A D2PAK
FIXED IND 5.6UH 123MA 3.1 OHM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFRED® |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 15A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 2 V @ 30 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 60 ns |
| 电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商设备包: | TO-263AB (D²PAK) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDH08G65C5XKSA1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
SF26GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO204AC |
|
VS-12FL100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 12A DO203AA |
|
GL1MDiotec Semiconductor |
DIODE STD DO-213AA 1000V 1A |
|
NTE5998NTE Electronics, Inc. |
R-800 PRV 40A CATH CASE |
|
VS-307URA200Vishay General Semiconductor – Diodes Division |
DIODE GP 2KV 330A DO205AB |
|
VS-5EWH06FNHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 5A D-PAK |
|
RS2MAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1.5A DO214AC |
|
ZHCS500QTCZetex Semiconductors (Diodes Inc.) |
SCHOTTKY DIODE SOT23 |
|
SF45G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 4A DO201AD |
|
SS2PH9-M3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA |
|
CDBC360LR-HFComchip Technology |
DIODE SCHOTTKY 60V 3A DO214AB |
|
1N1190AGeneSiC Semiconductor |
DIODE GEN PURP 600V 40A DO5 |