







CRYSTAL 27.0000MHZ 12PF SMD
R-1000 PRV 12A CATH CASE
MOSFET N-CH 90V 860MA TO39
OPTOISO 5.3KV TRANS W/BASE 6DIP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1000 V |
| 电流 - 平均整流 (io): | 12A |
| 电压 - 正向 (vf) (max) @ if: | 1.26 V @ 38 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 12 mA @ 1000 V |
| 电容@vr, f: | - |
| 安装类型: | Stud Mount |
| 包/箱: | DO-203AA, DO-4, Stud |
| 供应商设备包: | DO-4 |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
EGP10ARochester Electronics |
RECTIFIER DIODE, 1A, 50V, DO-41 |
|
|
BYV26D-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1A SOD57 |
|
|
MUR8100EGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1000V 8A TO220-2 |
|
|
UF1M-TPMicro Commercial Components (MCC) |
DIODE 1000V 1A SMB DO214AA |
|
|
CDBT-54-GComchip Technology |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
|
IDDD06G65C6XTMA1IR (Infineon Technologies) |
SIC DIODES |
|
|
US5G-TPMicro Commercial Components (MCC) |
5A,400V, SUPER FAST RECOVERY REC |
|
|
ISL9R30120G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1200V 30A TO247-2 |
|
|
US1JHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
|
SL310CSURGE |
3A -100V - SMC (DO-214AB) - RECT |
|
|
GP10Q-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 1A DO204AL |
|
|
TBAS16,LMToshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 80V 215MA SOT23-3 |
|
|
SB10-03A3-BTRochester Electronics |
RECTIFIER DIODE |