| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Strip | 
| 零件状态: | Active | 
| 二极管型: | Standard | 
| 电压 - 直流反向 (vr) (max): | 600 V | 
| 电流 - 平均整流 (io): | 8A | 
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 8 A | 
| 速度: | Standard Recovery >500ns, > 200mA (Io) | 
| 反向恢复时间 (trr): | 1.5 µs | 
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V | 
| 电容@vr, f: | - | 
| 安装类型: | Through Hole | 
| 包/箱: | DO-201AA, DO-27, Axial | 
| 供应商设备包: | DO-201 | 
| 工作温度 - 结: | -50°C ~ 175°C | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | NTE5838NTE Electronics, Inc. | R-400 PRV 3A CATH CASE | 
|   | LL103BR13Diotec Semiconductor | SCHOTTKY SOD-80 30V 0.35A | 
|   | JANS1N5806Roving Networks / Microchip Technology | DIODE GEN PURP 150V 1A AXIAL | 
|   | DSEI60-02AWickmann / Littelfuse | DIODE GEN PURP 200V 69A TO247AD | 
|   | 1N4938TRRochester Electronics | RECTIFIER DIODE | 
|   | 12TQ040STRSMC Diode Solutions | DIODE SCHOTTKY 40V 15A D2PAK | 
|   | VS-E5PX6006L-N3Vishay General Semiconductor – Diodes Division | 60A, 600V, "X" SERIES FRED PT IN | 
|   | RB168VAM-60TRROHM Semiconductor | SCHOTTKY BARRIER DIODE | 
|   | JANTXV1N6492Roving Networks / Microchip Technology | DIODE SCHOTTKY 45V 3.6A TO205AF | 
|   | 3A100 R0GTSC (Taiwan Semiconductor) | DIODE GEN PURP 3A DO204AC | 
|   | DGP15-E3/73Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 1.5KV 1.5A DO204 | 
|   | NTE5918NTE Electronics, Inc. | R-300PRV 20A CATH CASE | 
|   | BAR63-05WH6327Rochester Electronics | PIN DIODE, 50V V(BR) |