







12V6A 18-72VIN 2.5X3.5 CHASSIS M
XTAL OSC XO 61.4400MHZ HCSL
MEMS OSC XO 66.6000MHZ LVCMOS LV
DIODE GEN PURP 100V 4A DO214AB
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 4A |
| 电压 - 正向 (vf) (max) @ if: | 1.15 V @ 4 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.5 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 100 V |
| 电容@vr, f: | 60pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SDUR3060WSMC Diode Solutions |
DIODE GEN PURP 600V 30A TO247AC |
|
|
MBR350RLRochester Electronics |
RECTIFIER DIODE |
|
|
MMBD914-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
|
|
BYM11-50-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
|
|
UG1B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
|
JANS1N5809Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A AXIAL |
|
|
MCL4148-TRVishay General Semiconductor – Diodes Division |
DIODE GP 75V 150MA MICROMELF |
|
|
SB05-05C-TB-ESanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 50V 500MA 3CP |
|
|
1N4947GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
|
XBS013S15R-GTorex Semiconductor Ltd. |
DIODE SCHOTTKY 30V 100MA SOD523 |
|
|
NTE6039NTE Electronics, Inc. |
R-500 PRV 60A ANODE CASE |
|
|
VS-12FLR100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 12A DO203AA |
|
|
PMEG4005AEV,115Nexperia |
DIODE SCHOTTKY 40V 500MA SOT666 |