







MEMS OSC XO 166.666666MHZ LVCMOS
DIODE GEN PURP 1.2KV 60A TO247AD
CONN HEADER SMD R/A 2POS 3MM
CONN RCPT 70POS 0.1 GOLD PCB
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 60A |
| 电压 - 正向 (vf) (max) @ if: | 2.32 V @ 60 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 200 ns |
| 电流 - 反向泄漏@ vr: | 125 µA @ 1200 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247AD |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BYV29B-300-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
|
BAS40B5000Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
|
B360A-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AC |
|
|
AS3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2.1A TO277A |
|
|
AU3PK-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
|
NSB8AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
|
|
1N4003T-GComchip Technology |
DIODE GEN PURP 200V 1A DO41 |
|
|
SL26BSURGE |
2A -60V - SMB (DO-214AA) - RECTI |
|
|
SDURD830TRSMC Diode Solutions |
DIODE GEN PURP 300V 8A DPAK |
|
|
HVP10Rectron USA |
DIODE HV ASSEMBLIED 10KV .75A |
|
|
NRVBB1060W1T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10A 60V D2PAK-3 |
|
|
DFLR1200-7Zetex Semiconductors (Diodes Inc.) |
DIODE GP 200V 1A POWERDI123 |
|
|
VS-ETH1506STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |