English
简体中文
XTAL OSC VCXO 491.5200MHZ HCSL
SIC DIODE TO220 650V
DIODE SCHOTTKY 600V 4A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 4A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.6 V @ 1 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 76pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-206AB, TO-46-3 Metal Can |
| 供应商设备包: | TO-46 |
| 工作温度 - 结: | -55°C ~ 225°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SBAS16HT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD323 |
|
CMDSH-3 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 30V 100MA SOD323 |
|
S1BB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AA |
|
MMBD4148 RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 200MA SOT23 |
|
RFU01SM4ST2RROHM Semiconductor |
SUPER FAST RECOVERY DIODE FOR GE |
|
B5818WS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 1A SOD323 |
|
SDURD1060TRSMC Diode Solutions |
DIODE GEN PURP 600V DPAK |
|
FFSB0665B-F085Sanyo Semiconductor/ON Semiconductor |
650V 6A SIC SBD GEN1.5 |
|
CMHD4150 TRCentral Semiconductor |
DIODE GEN PURP 50V 250MA SOD123 |
|
SS1FH10HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
|
IDD08SG60CXTMA1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
US1K-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
FFSB1065BSanyo Semiconductor/ON Semiconductor |
650V 10A SIC SBD GEN1.5 |