English
简体中文
MEMS OSC XO 16.3680MHZ LVCMOS LV
TRANS PNP 60V 0.6A TO18
DIODE GEN PURP 2.2KV 1030A
CRYSTAL 32.7680KHZ 7PF SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 2200 V |
| 电流 - 平均整流 (io): | 1030A |
| 电压 - 正向 (vf) (max) @ if: | 1.11 V @ 10000 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 40 mA @ 2200 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis Mount |
| 包/箱: | DO-200AB, B-PUK |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 160°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MR10120ERochester Electronics |
DIODE SWITCHING 1.2KV 10A |
|
VS-MUR820-M3Vishay General Semiconductor – Diodes Division |
DIODE FRED 200V 8A TO220AC |
|
SF47GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 4A DO201AD |
|
IDFW40E65D1EXKSA1IR (Infineon Technologies) |
DIODE GP 650V 42A TO247-3-AI |
|
STTH806DTISTMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
|
SA2M-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GPP 2A 1000V DO-214AC |
|
ES2AHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO214AA |
|
S1W-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
HRW0502ATR-ERochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
S4M V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 4A DO214AB |
|
GR2JA-F1-3000HF |
DIODE GEN PURP 600V 2A DO214AC |
|
CMR1F-06M TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 600V 1A SMA |
|
DSEI60-06AWickmann / Littelfuse |
DIODE GEN PURP 600V 60A TO247AD |