English
简体中文
DIODE GEN PURP 600V 800MA SUBSMA
IC TRANSCEIVER 1/1 24MLF
SENSOR 15PSI 1/4-18NPT .5-4.5V
TRHU-BEAM 30M NPN/PNP HORZ CONN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 800mA |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 800 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 250 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | Sub SMA |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S12MC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 12A DO214AB |
|
CMR3U-04 BK PBFREECentral Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
VBT1080S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
|
BAS170WS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 70V 70MA SOD323 |
|
UG1A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
UFS315J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A DO214AB |
|
LSM835J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |
|
VS-6TQ045S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 6A TO263AB |
|
STPS5H100BY-TRSTMicroelectronics |
DIODE SCHOTTKY 100V 5A DPAK |
|
S1JLS RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1.2A SOD123 |
|
ST10100STRSMC Diode Solutions |
DIODE SCHOTTKY 100V TO277B |
|
DZ1070N28KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.8KV 1070A MOD |
|
CMPD914 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOT23 |