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RF ATTENUATOR 10.5DB 50OHM SMA
FUSE BRD MNT 750MA 250VAC 450VDC
T MET BI 500W 6V8 19500/516
HDM 5EMPO140F310F G
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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5SMC22CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
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MXLSMLG6.5ARoving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
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1N6302AHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 154V 246V 1.5KE |
|
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JAN1N6105ARoving Networks / Microchip Technology |
TVS DIODE 6.9V 13.4V AXIAL |
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MPLAD15KP85AE3/TRRoving Networks / Microchip Technology |
TVS |
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JTXV1N6116AUSSemtech |
T MET BI 500W 27V |
|
|
MSMCJ8.5CA/TRRoving Networks / Microchip Technology |
TVS |
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MXPLAD18KP78AE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
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MSMBG18CA/TRRoving Networks / Microchip Technology |
TVS |
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|
MXLP6KE100ARoving Networks / Microchip Technology |
TVS DIODE 85.5V 137V T-18 |
|
|
MXLPLAD15KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
|
|
SMCG6060/TR13Microsemi |
TVS DIODE 60V 108V DO215AB |
|
|
JTXV1N6153Semtech |
T MET BI 1500W 22.8V HRV |